symbol characteristics 90a 110a units i t(av) or i f(av) 90 110 50 hz t jm 2,000 2,400 60 hz t jm 2,132 2,558 50 hz t jm 20.40 29.30 60 hz t jm 19.24 27.63 v rrm range 600 to 2000 600 to 2000 t stg t j -40 to 125 major ratings and characteristics a i tsm , i fsm -40 to 125 mechanical description the mtc, mfc module, combines the excellent thermal performances obtained by the usage of exposed direct bonded copper substrate, with advanced compact simple package solution and simplified internal structure with minimized number of interfaces. thyristor/thyristor module mtc90a/110a thyristor/diode module mfc90a/110a features ? high voltage ? industrial standard package ? low thermal resistance ? designed and qualified for industrial level ? excellent thermal performances obtained by the usage of exposed direct bonded copper substrate ? high surge capability ? easy mounting on heatsink applications these modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, lighting circuits, temperature and motor speed control circuits, ups and battery charger. wenzhou zhongbao electric & electronic factory www.santry.com.cn t: 86-577-86928695 f:86-577-86926737 1 v
parameter symbol 90a 110a units maximum average on-state current (thyristors) i t(av) maximum average forward current (diodes) i f(av) t = 10 ms 80 % v rrm 2,000 2,400 t = 8.3 ms reapplied 2,132 2,558 t = 10 ms 20.40 29.30 t = 8.3 ms 19.24 27.63 v tm i tm = x i t(av) v fm i fm = x i f(av) maximum non-repetitive rate of rise of turned on current di/dt maximum holding current i h maximum latching current i l parameter symbol 90a 110a units maximum peak gate power p gm 8 10 maximum average gate power p g(av) 2 3 maximum peak gate current i gm 2 3 a maximum peak negative gate voltage - vgm maximum gate voltage that will not trigger v gd v maximum gate current that will not trigger i gd ma maximum value of on-state slope resistance 1.30 t j v t j = t j maximum 1.26 r t 1.18 m maximum value or threshold voltage v t(to) v t j = t j maximum no voltage reapplied initial t j = t j maximum 0.97 on-state conduction test conditions 180?conduction, half sine wave, t c 90 a maximum peak, one-cycle non-repetitive on-state or forward current i tsm or i fsm sinusoidal half wave, initial t j = t j maximum 110 t j drm , i tm = x i t(av) , i g = 500 ma, t r p t j circuit triggering 1.40 ma t j maximum peak on-state or forward voltage 100 250 600 t j drm applied t j drm applied 100 0.20 6 maximum gate current required to trigger i gt t j anode supply = 6 v resistive load maximum gate voltage required to trigger v gt t j test conditions t j t j w v ma 10 3 3.5 anode supply = 6 v resistive load thyristor/thyristor module mtc90a/110a thyristor/diode module mfc90a/110a notes: average power = vt(to) x it(av) +2.56 rt x (it(av)) wenzhou zhongbao electric & electronic factory www.santry.com.cn t: 86-577-86928695 f:86-577-86926737 2
symbol test conditions 90a 110a units i rrm, i drm t j 10 12 ma v iso 50 hz v dv/dt t j drm symbol test conditions 90a 110a units t j , t stg r thjc dc operation 0.28 0.25 r thcs mounting surface flat, smooth and greased to heatsink busbar g 2500 (1 min) 500 parameter a mounting compound is recommended and the torque should be rechecked after a period of 3 h to allow for the spread of the compound. - 40 to 125 0.1 3 2 blocking maximum internal thermal resistance, junction to case per leg typical thermal resistance, case to heatsink per module parameter maximum peak reverse and off-state leakage current at v rrm , v drm maximum rms insulation voltage junction operating and storage temperature range maximum critical rate of rise of off-state voltage thermal and mechanical specifications 150 case style mounting torque ?10 % m01 approximate weight nm thyristor/thyristor module mtc90a/110a thyristor/diode module mfc90a/110a wenzhou zhongbao electric & electronic factory www.santry.com.cn t: 86-577-86928695 f:86-577-86926737 3
|
